Fornida has acquired a number of brand new Winbond W9825G6EH-6 memory chips in original manufacturers packaging. As part of Fornida’s commitment to quality, selected chips have been fully tested and X-Rayed to ensure perfect functionality and authenticity.
W9825G6EH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words ×4 banks ×16 bits. The W9825G6EH delivers a data bandwidth of up to 200M words per second (-5). To fully comply with the personal computer industrial standard, W9825G6EH is sorted into the following speed grades: -5/-6/-6I/-6A/-75/75I and 75A. The -5 is compliant to the 200MHz/CL3 specification. The -6 is compliant to the 166MHz/CL3 or 133MHz/CL2 specification. The -6I/-6A is compliant to the 166MHz/CL3 specification (the -6I industrial grade, -6A automotive grade which is guaranteed to support -40°C ~ 85°C). The -75/75I/75Ais compliant to the 133MHz/CL3 specification (the 75I industrial grade, 75A automotive grade which is guaranteed to support -40°C ~ 85°C).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9825G6EH is ideal for main memory in high performance applications.
Click here to download W9825G6EH-DATASHEET